A 2 M pixel HDTV CCD image sensor with tungsten photo-shield and H-CCD shunt wiring

Author

Morimoto, M. ; Orihara, K. ; Mutoh, N. ; Toyoda, A. ; Ohbo, M. ; Kawakami, Y. ; Nakano, T. ; Chiba, K. ; Hatano, K. ; Arai, K. ; Nishimura, M. ; Nakashiba, Y. ; Kohno, A. ; Akiyama, I. ; Teranishi, N. ; Hokari, Y.

Author_Institution

NEC Corp., Sagamihara, Japan

fYear

1992

fDate

19-21 Feb. 1992

Firstpage

172

Lastpage

173

Abstract

A 1-in optical lens format, 2-Mpixel FIT-CCD (charge coupled device) image sensor is described. The low reflectance and good step coverage characteristics of a tungsten photoshield, combined with a frame-interline-transfer scheme, reduces the smear level to -110 dB. The tungsten photoshield also acts as a shunt bus line, supplying transfer pulses to vertical CCD (V-CCD) electrodes, so that a 1.2*10/sup 5/-electron charge-handling capability is obtained at a frame transfer frequency of 1 MHz. Tungsten-and-aluminum-shunt (TAS) wiring, used in a horizontal CCD (H-CCD), suppresses vertical line pair fixed-pattern noise, even at a smaller transfer pulse amplitudes. TAS wiring also helps reduce power consumption in the H-CCD by 2/3 compared to that achieved with conventional wiring.<>

Keywords

CCD image sensors; MOS integrated circuits; high definition television; tungsten; 1 in; 2 Mpixel; H-CCD shunt wiring; W photoshield; frame transfer frequency; frame-interline-transfer scheme; power consumption; smear level; Charge coupled devices; Charge-coupled image sensors; HDTV; Image sensors; Lenses; Optical devices; Optical sensors; Pixel; Tungsten; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1992. Digest of Technical Papers. 39th ISSCC, 1992 IEEE International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-0573-6

Type

conf

DOI

10.1109/ISSCC.1992.200466

Filename

200466