DocumentCode
3039427
Title
Fast and accurate programming method for multi-level NAND EEPROMs
Author
Hemink, G.J. ; Tanaka, T. ; Endoh, T. ; Aritome, S. ; Shirota, R.
Author_Institution
ULSI Res. Center, Toshiba Corp., Kawasaki, Japan
fYear
1995
fDate
6-8 June 1995
Firstpage
129
Lastpage
130
Abstract
For the replacement of conventional hard disks by NAND EEPROMs, a very high density and a high programming speed are required. An increased density can be achieved by using multi-level memory cells. With the new method, using staircase programming pulses combined with a bit-by-bit verify, a very narrow threshold voltage distribution of 0.7 V, necessary for 4-level or 2-bit operation, and a high programming speed of 300 /spl mu/s/page or 590 ns/byte can be obtained.
Keywords
EPROM; NAND circuits; PLD programming; cellular arrays; integrated memory circuits; 0.7 V; bit-by-bit verify; multi-level NAND EEPROMs; multi-level memory cells; programming method; programming speed; staircase programming pulses; threshold voltage distribution; EPROM; Electrons; Nonvolatile memory; Pulse measurements; Pulse shaping methods; Shape measurement; Threshold voltage; Tunneling; Ultra large scale integration; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
0-7803-2602-4
Type
conf
DOI
10.1109/VLSIT.1995.520891
Filename
520891
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