DocumentCode :
3039538
Title :
Spin orbit coupling in InSb multi-valleys
Author :
Wang, Wei ; Zhang, Minghua
Author_Institution :
Dept. of Phys., Jining Univ., Qufu, China
fYear :
2011
fDate :
26-28 July 2011
Firstpage :
6023
Lastpage :
6024
Abstract :
With the help of sp3d5s* tight-binding model, we calculate the spin orbit splitting in the whole Brillouin zone deriving from InSb Γ-valley of the lowest electronic subband, heavy hole, light hole and split-off hole. The cases of L and X-valleys with higher energy for the lowest electronic subband are also discussed. We further present the electron spin orbit coupling parameter at the corresponding valley bottom. Our results should be useful for the on-going study on spin dynamics in InSb.
Keywords :
band structure; indium compounds; semiconductor materials; spin dynamics; spin-orbit interactions; tight-binding calculations; Brillouin zone; InSb; heavy hole; light hole; lowest electronic subband; multivalleys; sp3d5s* tight-binding model; spin dynamics; spin orbit coupling; split-off hole; Charge carrier processes; Couplings; Magnetoelectronics; Orbits; Scattering; Solids; semiconductor; spin orbit coupling; spintronics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Multimedia Technology (ICMT), 2011 International Conference on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-61284-771-9
Type :
conf
DOI :
10.1109/ICMT.2011.6002541
Filename :
6002541
Link To Document :
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