• DocumentCode
    3039561
  • Title

    Highly reliable, complementary atom switch (CAS) with low programming voltage embedded in Cu BEOL for Nonvolatile Programmable Logic

  • Author

    Tada, M. ; Sakamoto, T. ; Miyamura, M. ; Banno, N. ; Okamoto, K. ; Iguchi, N. ; Nohisa, T. ; Hada, H.

  • Author_Institution
    Low-power Electron. Assoc. & Project (LEAP), Tsukuba, Japan
  • fYear
    2011
  • fDate
    5-7 Dec. 2011
  • Abstract
    A novel complementary atom switch (CAS) embedded in Cu BEOL has been developed to realize low programming voltage of 2V and extremely high disturbance reliability of OFF-state (T0.1>;10 years at 1V, 125°C). The decrement of solid-electrolyte density successfully reduces the programming voltage down to 2V. Two bipolar resistive-change elements such as atom switches are connected in series with opposite direction, in which the two OFF-state elements complementarily divide the voltage stress, greatly enlarging the OFF-state lifetime. The highly reliable, complementary atom switch is a promising device for energy efficient, Nonvolatile Programmable Logic (NPL).
  • Keywords
    programmable logic devices; random-access storage; BEOL; bipolar resistive-change elements; complementary atom switch; low programming voltage; nonvolatile programmable logic; solid-electrolyte density; temperature 125 degC; voltage 2 V; Arrays; Copper; Optical switches; Programming; Reliability; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2011 IEEE International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4577-0506-9
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2011.6131642
  • Filename
    6131642