DocumentCode
3039561
Title
Highly reliable, complementary atom switch (CAS) with low programming voltage embedded in Cu BEOL for Nonvolatile Programmable Logic
Author
Tada, M. ; Sakamoto, T. ; Miyamura, M. ; Banno, N. ; Okamoto, K. ; Iguchi, N. ; Nohisa, T. ; Hada, H.
Author_Institution
Low-power Electron. Assoc. & Project (LEAP), Tsukuba, Japan
fYear
2011
fDate
5-7 Dec. 2011
Abstract
A novel complementary atom switch (CAS) embedded in Cu BEOL has been developed to realize low programming voltage of 2V and extremely high disturbance reliability of OFF-state (T0.1>;10 years at 1V, 125°C). The decrement of solid-electrolyte density successfully reduces the programming voltage down to 2V. Two bipolar resistive-change elements such as atom switches are connected in series with opposite direction, in which the two OFF-state elements complementarily divide the voltage stress, greatly enlarging the OFF-state lifetime. The highly reliable, complementary atom switch is a promising device for energy efficient, Nonvolatile Programmable Logic (NPL).
Keywords
programmable logic devices; random-access storage; BEOL; bipolar resistive-change elements; complementary atom switch; low programming voltage; nonvolatile programmable logic; solid-electrolyte density; temperature 125 degC; voltage 2 V; Arrays; Copper; Optical switches; Programming; Reliability; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131642
Filename
6131642
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