Title :
Accurate interconnect modeling for high frequency LSI/VLSI circuits and systems
Author :
Lin-Hendel, C.G.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ
Abstract :
Criteria and methods for accurately modeling LSI/VLSI interconnect lines at various high-frequency ranges are discussed. The Elmore-Sakurai RC model for delay time is verified for frequencies of tens to low hundreds of MHz. The inductance effect is then analyzed for frequencies from high tens to low hundreds of MHz to 50 GHz. General and special transfer functions are analyzed and plotted. The skin-effect-caused frequency dependence of line resistance and inductance are considered. Finally, the impulse response function is derived from inverting the transfer function, and simplified for efficient computerisation of the transient response of an interconnect line at very high frequencies. The models are verified to the exact fit using a network analyzer and digitizing oscilloscope in a magnetically and electrically shielded environment, measuring the S-parameters (amplitude of transfer function), phase, and transient responses
Keywords :
VLSI; delays; semiconductor device models; transfer functions; transient response; Elmore-Sakurai RC model; S-parameters measurement; delay time; digitizing oscilloscope; high frequency LSI/VLSI circuits; impulse response function; interconnect modeling; line inductance; line resistance; network analyzer; phase; skin-effect-caused frequency dependence; transfer functions; transient response; Delay effects; Frequency dependence; Inductance; Integrated circuit interconnections; Large scale integration; Magnetic analysis; Oscilloscopes; Transfer functions; Transient response; Very large scale integration;
Conference_Titel :
Computer Design: VLSI in Computers and Processors, 1990. ICCD '90. Proceedings, 1990 IEEE International Conference on
Conference_Location :
Cambridge, MA
Print_ISBN :
0-8186-2079-X
DOI :
10.1109/ICCD.1990.130273