DocumentCode :
3039613
Title :
Integration of nanoelectromechanical (NEM) relays with silicon CMOS with functional CMOS-NEM circuit
Author :
Chong, Soogine ; Lee, Byoungil ; Parizi, Kokab B. ; Provine, J. ; Mitra, Subhasish ; Howe, Roger T. ; Wong, H. -S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear :
2011
fDate :
5-7 Dec. 2011
Abstract :
This paper demonstrates electrical results of an integrated Si CMOS-electrostatically actuated nanoelectromechanical (NEM) relay circuit. This is an initial step towards realizing previously proposed NEM-CMOS hybrid circuits that predict various benefits compared to CMOS-only circuits. In this work, an e-beam patterned laterally actuated Pt NEM relay is fabricated at CMOS-compatible temperatures (≤ 400 °C) on top of CMOS and is driven by an on-chip CMOS inverter at VDD = 6 V.
Keywords :
CMOS integrated circuits; elemental semiconductors; nanoelectromechanical devices; silicon; Si; e-beam; functional CMOS-NEM hybrid circuit; nanoelectromechanical relays; voltage 6 V; CMOS integrated circuits; Fabrication; Inverters; Lithography; Logic gates; Relays; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2011.6131645
Filename :
6131645
Link To Document :
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