DocumentCode :
3039635
Title :
Experimental demonstration and analysis of DNA passage in nanopore-based nanofluidic transistors
Author :
Paik, Kee-Hyun ; Liu, Yang ; Tabard-Cossa, Vincent ; Huber, David E. ; Provine, J. ; Howe, Roger T. ; Davis, Ronald W. ; Dutton, Robert W.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear :
2011
fDate :
5-7 Dec. 2011
Abstract :
We investigate DNA passage through a nanofluidic transistor (NFT) composed of large diameter nanopores (~200nm) with an embedded metal gate. The nanopores are large enough to be made by currently available photolithography process for manufacturability. We observe that the NFT is capable of electrostatic control of DNA capture rate, the equivalent of current in the electron transistor, with similar operating principle as their electron device counterpart.
Keywords :
DNA; MOSFET; electrostatics; nanofluidics; photolithography; DNA capture rate; DNA passage; electron transistor; electrostatic control; embedded metal gate; large diameter nanopores; nanopore-based nanofluidic transistors; photolithography; Aluminum oxide; Arrays; DNA; Electrodes; Fluids; Logic gates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2011.6131646
Filename :
6131646
Link To Document :
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