Title :
Complementary switching in metal oxides: Toward diode-less crossbar RRAMs
Author :
Nardi, F. ; Balatti, S. ; Larentis, S. ; Ielmini, D.
Author_Institution :
Dipt. di Elettron. e Inf., Politec. di Milano, Milan, Italy
Abstract :
A major challenge in achieving high density crossbar arrays based on resistive-switching memory (RRAM) is the identification of a select device (e.g. diode) with suitable supply current and on-off swing. Recently, the complementary resistance switch (CRS) concept based on a 2-RRAM stack was proposed to solve the sneak-path problem in crossbar arrays [1]. This work demonstrates complementary switching (CS) in single-stack nonpolar-RRAM devices. After describing CS characteristics by simulations, we show the operation under DC/pulsed regime and discuss methods to improve the resistive window. Finally, a unified model for unipolar, bipolar and complementary switching in oxide-RRAM is proposed.
Keywords :
CMOS integrated circuits; random-access storage; complementary switching; diode-less crossbar RRAM; high density crossbar arrays; metal oxides; resistive window; resistive-switching memory; Copper; Electrodes; Hafnium compounds; Integrated circuits; Ions; Materials; Switches;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131647
