Title :
Self-rectifying and forming-free unipolar HfOx based-high performance RRAM built by fab-avaialbe materials
Author :
Tran, X.A. ; Gao, B. ; Kang, J.F. ; Wu, X. ; Wu, L. ; Fang, Z. ; Wang, Z.R. ; Pey, K.L. ; Yeo, Y.C. ; Du, A.Y. ; Liu, M. ; Nguyen, B.Y. ; Li, M.F. ; Yu, H.Y.
Author_Institution :
Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore
Abstract :
In this paper, we report a high performance, forming-free and self-rectifying unipolar HfOx based RRAM fabricated by fab-available materials. Highlight of the demonstrated RRAM include 1) CMOS technology friendly materials and process, 2) excellent self-rectifying behavior in LRS (>;103 @ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices (number of word-line >;106 for worst case condition).
Keywords :
CMOS memory circuits; hafnium compounds; random-access storage; CMOS technology; HfOx; fab-avaialbe material; forming-free unipolar resistive switching; high density cross-point memory device; high performance RRAM; read-out margin; self-rectifying unipolar; Electrodes; Hafnium compounds; Nickel; Resistance; Silicon; Switches; Tin;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131648
