Title :
Double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE
Author :
Yang, K. ; Munns, G.O. ; Wang, X. ; Haddad, G.I.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
We report the performance of InP DHBTs with a chirped InGaAs/InP superlattice B-C junction grown by CBE. The B-C junction of the DHBT was graded with a 10-period InGaAs/InP chirped superlattice (CSL) between the InGaAs base and the lightly doped InP collector. A highly doped thin layer was also included at the end of the CSL to offset the quasielectric field arising from the grade and suppress further the carrier blocking effect across the B-C heterojunction. The InP/InGaAs CSL DHBT demonstrated a high BVCFEO of 18 V with a typical current gain of 55 with minimal carrier blocking up to high current densities. Maximum cutoff frequencies of fmax=146 GHz and fτ=71 GHz were obtained from the fabricated 2×10 μm2-emitter DHBT
Keywords :
III-V semiconductors; chemical beam epitaxial growth; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; millimetre wave bipolar transistors; millimetre wave power transistors; power bipolar transistors; semiconductor growth; semiconductor superlattices; 146 GHz; 18 V; 71 GHz; CBE growth; Gummel plot; InGaAs base; InGaAs-InP; InP; breakdown voltage; carrier blocking effect suppression; chirped InGaAs/InP superlattice base-collector junction; common emitter I-V characteristics; current gain; double heterojunction bipolar transistors; gain-frequency characteristics; high current densities; high power applications; highly doped thin layer; lightly doped InP collector; maximum cutoff frequencies; quasielectric field offset; Chemicals; Chirp; Cutoff frequency; Double heterojunction bipolar transistors; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Superlattices; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600255
