Title :
Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model
Author :
Wei, Z. ; Takagi, T. ; Kanzawa, Y. ; Katoh, Y. ; Ninomiya, T. ; Kawai, K. ; Muraoka, S. ; Mitani, S. ; Katayama, K. ; Fujii, S. ; Miyanaga, R. ; Kawashima, Y. ; Mikawa, T. ; Shimakawa, K. ; Aono, K.
Author_Institution :
Adv. Devices Dev. Center, Panasonic Co., Kyoto, Japan
Abstract :
A new oxygen diffusion reliability model for a high-density bipolar ReRAM is developed based on hopping conduction in filaments, which allows statistical predication of activation energy. The filament in the active cells is confirmed by EBAC and TEM directly for the first time. With optimized filament size, a 256-kbit ReRAM with long-term retention exceeding 10 years at 85°C is successfully demonstrated.
Keywords :
diffusion; hopping conduction; random-access storage; reliability; statistical analysis; EBAC; ReRAM; TEM; activation energy; filaments; hopping conduction; oxygen diffusion; reliability model; resistance random access memory; statistical predication; temperature 85 degC; Arrays; Conductivity; Degradation; Equations; Mathematical model; Reliability; Resistance;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131650
