Title :
10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Author :
Govoreanu, B. ; Kar, G.S. ; Chen, Y-Y ; Paraschiv, V. ; Kubicek, S. ; Fantini, A. ; Radu, I.P. ; Goux, L. ; Clima, S. ; Degraeve, R. ; Jossart, N. ; Richard, O. ; Vandeweyer, T. ; Seo, K. ; Hendrickx, P. ; Pourtois, G. ; Bender, H. ; Altimime, L. ; Wouter
Author_Institution :
Imec, Leuven, Belgium
Abstract :
We report on world´s smallest HfO2-based Resistive RAM (RRAM) cell to date, featuring a novel Hf/HfOx resistive element stack, with an area of less than 10×10 nm2, fast ns-range on/off switching times at low-voltages and with a switching energy per bit of <;0.1pJ. With excellent endurance of more than 5.107cycles, large on/off verified-window (>;50), no closure of the on/off window after 30hrs/200C and failure-free device operation after 30hrs/250C thermal stress, the major device-level nonvolatile memory requirements are met. Furthermore, we clarify the impact of film crystallinity on cell operation from a scalability viewpoint, the role of the cap layer and bring insight into the switching mechanisms.
Keywords :
hafnium; hafnium compounds; integrated circuit reliability; random-access storage; thermal stresses; Hf-HfOx; RRAM cell; crossbar resistive RAM; device-level nonvolatile memory; failure-free device operation; film crystallinity; low-energy operation; reliability; resistive element stack; thermal stress; Films; Hafnium oxide; Switches; Tin; Voltage control;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131652
