Title :
A low thermal budget, fully self-aligned lateral BJT on thin film SOI substrate for low power BiCMOS applications
Author :
Chen, V.M.C. ; Woo, J.C.S.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
A novel SDE LBJT on TFSOI substrate has been demonstrated. The fabrication process is self-aligned, with a minimum thermal budget, and is fully compatible with an SOI CMOS process. Good electrical results were obtained. The devices are expected to have good current drive and high frequency performance for low power applications.
Keywords :
BiCMOS integrated circuits; bipolar transistors; characteristics measurement; silicon-on-insulator; current drive; electrical results; fabrication process; fully self-aligned lateral BJT; high frequency performance; low power BiCMOS applications; symmetric dual emitter; thermal budget; thin film SOI substrate; BiCMOS integrated circuits; CMOS process; Driver circuits; Etching; Fabrication; Implants; Integrated circuit interconnections; Substrates; Thermal engineering; Transistors;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520893
