Title :
Minimization of the noise measure of InP/InGaAs HBTs
Author :
Huber, A. ; Bergamaschi, C. ; Bauknecht, R. ; Jäckel, H. ; Melchior, H.
Author_Institution :
Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Abstract :
A complete noise characterization as a function of emitter-geometry, temperature, bias-point and frequency (2-26 GHz) of InP/InGaAs HBTs was carried out. Measurements and simulations have shown that there is an optimum emitter geometry and bias point for achieving a minimum noise measure. The noise measure is very important figure of merit in broadband amplifier design because not only the noise but also the gain of the device is taken into account. The measured noise characteristics are validated by an equivalent circuit model with associated noise sources at different device temperatures
Keywords :
III-V semiconductors; S-parameters; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; semiconductor device noise; 2 to 26 GHz; 20 to 60 C; InP; InP-InGaAs; InP/InGaAs HBTs; S-parameters; bias-point dependence; broadband amplifier design; emitter-geometry dependence; equivalent circuit model; figure of merit; frequency dependence; gain; noise measure minimization; simulations; temperature dependence; Circuit noise; Frequency; Geometry; Indium gallium arsenide; Indium phosphide; Minimization; Noise figure; Noise measurement; Solid modeling; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600256
