Title :
Exploration of device-circuit interactions in FinFET-based memories for sub-15nm technologies using a mixed mode quantum simulation framework: Atoms to systems
Author :
Gupta, Sumeet Kumar ; Choday, Sri Harsha ; Roy, Kaushik
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
We compare independent gate FinFETs, FinFETs with different fin orientations and asymmetric drain spacer extension FinFETs to analyze the implications of each for memory design in sub-15nm technologies. A mixed mode simulation framework based on ballistic NEGF models for FinFETs and circuit simulations in SPICE is developed for the analysis.
Keywords :
MOSFET; circuit simulation; integrated memory circuits; mixed analogue-digital integrated circuits; FinFET-based memories; SPICE; asymmetric drain spacer extension; atoms; ballistic NEGF models; circuit simulations; device-circuit interactions; memory design; mixed mode quantum simulation; Analytical models; Degradation; FinFETs; Integrated circuit modeling; Logic gates; Mathematical model; Random access memory;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131659
