• DocumentCode
    3039988
  • Title

    Correlative analysis between characteristics of 30-nm LG FinFETs and SRAM performance

  • Author

    Endo, Kazuhiko ; O´uchi, S. ; Ishikawa, Yuki ; Liu, Yongxun ; Matsukawa, Takashi ; Sakamoto, Kunihiro ; Tsukada, Junichi ; Yamauchi, Hiromi ; Masahara, Meishoku

  • Author_Institution
    Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2011
  • fDate
    5-7 Dec. 2011
  • Abstract
    SRAM cells with 30-nm LG FinFETs have been successfully fabricated and the correlation between the characteristics of the FinFETs and the SRAM performance are precisely studied. By investigating an effect of the Vth variation to the static noise margin (SNM) of two different memory states of the storage node, it is revealed that the Vth variations of the pull-up, pull-down, and pass-gate transistors correlate with the SNM and this correlation strongly depends on the memory state.
  • Keywords
    MOSFET; SRAM chips; circuit noise; semiconductor device noise; LG FinFET; SNM; SRAM cell; correlative analysis; pass-gate transistor; pull-down transistor; pull-up transistor; size 30 nm; static noise margin; Correlation; FinFETs; Logic gates; Noise; Random access memory; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2011 IEEE International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4577-0506-9
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2011.6131660
  • Filename
    6131660
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3039988