Title :
Correlative analysis between characteristics of 30-nm LG FinFETs and SRAM performance
Author :
Endo, Kazuhiko ; O´uchi, S. ; Ishikawa, Yuki ; Liu, Yongxun ; Matsukawa, Takashi ; Sakamoto, Kunihiro ; Tsukada, Junichi ; Yamauchi, Hiromi ; Masahara, Meishoku
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
SRAM cells with 30-nm LG FinFETs have been successfully fabricated and the correlation between the characteristics of the FinFETs and the SRAM performance are precisely studied. By investigating an effect of the Vth variation to the static noise margin (SNM) of two different memory states of the storage node, it is revealed that the Vth variations of the pull-up, pull-down, and pass-gate transistors correlate with the SNM and this correlation strongly depends on the memory state.
Keywords :
MOSFET; SRAM chips; circuit noise; semiconductor device noise; LG FinFET; SNM; SRAM cell; correlative analysis; pass-gate transistor; pull-down transistor; pull-up transistor; size 30 nm; static noise margin; Correlation; FinFETs; Logic gates; Noise; Random access memory; Very large scale integration;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131660
