Title :
Charge-induced ferromagnetism in two-carbon cluster silicon
Author :
Shieh, T.-H. ; Chang, H.-C. ; Ting, H.-W. ; Hung, K.M. ; Li, J.-L. ; Hsu, Y.-H.
Author_Institution :
Dept. of Electron. Eng., Kun Shan Univ., Tainan, Taiwan
Abstract :
This paper presents the first-principles study of two carbon clusters in silicon matrix with 64-atom supercell. The band structure and net spin density of states indicate that the system with neutral charge is non-magnetic, but ferromagnetic as the system is charging with one electron or one hole. This phenomenon can be applied to design and fabricate Si-base spintronic MOS, non-volatile magnetic memory and other Si base spintronic devices where the field-controllable ferromagnetism is important.
Keywords :
ab initio calculations; band structure; carbon; electronic density of states; ferromagnetic materials; silicon; spin density waves; 64-atom supercell; Si; band structure; charge-induced ferromagnetism; field-controllable ferromagnetism; first-principles study; nonvolatile magnetic memory; silicon matrix; spin density of states; spintronic MOS; spintronic devices; two-carbon cluster silicon; Carbon; Charge carrier processes; Force; Impurities; Magnetic memory; Magnetoelectronics; Silicon; Carbon cluster; MOS; Si-base; spintronics;
Conference_Titel :
Multimedia Technology (ICMT), 2011 International Conference on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-61284-771-9
DOI :
10.1109/ICMT.2011.6002568
