Wideband LDMOS-based RF linearizer for multi-carrier 3G high power amplifier

Author

Park, Chan-Wang

Author_Institution

Electr. Eng. Dept., Univ. du Quebec a Rimouski, Que., Canada

fYear

2004

fDate

26-27 Apr 2004

Firstpage

59

Lastpage

62

Abstract

We propose a LDMOS based RF predistortion linearizer suitable for the 3G systems. By using same type of transistors in linearizer as in high power amplifier we can obtain quasi-inverse curves of AM/AM and AM/PM. It has the advantage of compensating temperature variations. Furthermore it has a wideband performance by equalizing the group delay of the linear path and nonlinear path having the same components, respectively. By applying this linearizer to the base station 310 W power amplifier we obtain 6.5 dB improvement at 3rd offset of ACPR and obtain 2 dB power increase at same linearity at 44 dBm average output power with 8% power efficiency for cdma2000 (SR3) multi-carrier signal.

Keywords

3G mobile communication; MOS integrated circuits; UHF power amplifiers; linearisation techniques; wideband amplifiers; 310 W; 8 percent; AM/AM; AM/PM; LDMOS-based RF linearizer; SR3 multi-carrier signal; cdma2000; group delay equalization; linear path; nonlinear path; quasi-inverse curves; temperature variation compensation; wideband linearizer; wideband performance; Base stations; Broadband amplifiers; Delay lines; High power amplifiers; Linearity; Power amplifiers; Predistortion; Radio frequency; Temperature; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Wired and Wireless Communication, 2004 IEEE/Sarnoff Symposium on

Print_ISBN

0-7803-8219-6

Type

conf

DOI

10.1109/SARNOF.2004.1302840

Filename

1302840