Title :
Analysis of dopant diffusion and defects in SiGe channel Quantum Well for Laser annealed device using an atomistic kinetic Monte Carlo approach
Author :
Noda, T. ; Witters, L. ; Mitard, J. ; Rosseel, E. ; Hellings, G. ; Vrancken, C. ; Bender, H. ; Hoffmann, T.Y. ; Horiguchi, N. ; Vandervorst, W.
Author_Institution :
Panasonic Corp., Nagaokakyo, Japan
Abstract :
An analysis of dopant diffusion and defects in SiGe-channel Quantum Well (QW) with Laser annealing using an atomistic KMC approach are shown. Thin SiGe layer with high Ge content for SiGe-channel QW has an impact on implantation damage and Boron-Transient Enhanced Diffusion (TED) suppression, and defect evolution. KMC shows that As-pocket in SiGe-channel pFET shows enhanced diffusion toward SiGe-channel and higher As concentration in SiGe-channel. The difference of pocket diffusion is one of possible reason for the higher Vth mismatch for SiGe-channel with As pocket than for Si-channel.
Keywords :
Ge-Si alloys; Monte Carlo methods; diffusion; field effect transistors; laser beam annealing; quantum well devices; semiconductor doping; QW; SiGe; atomistic KMC approach; atomistic kinetic Monte Carlo approach; boron-transient enhanced diffusion; channel quantum well; dopant diffusion; laser annealed device; pFET; Annealing; Atomic beams; Implants; Lasers; Resistance; Silicon; Silicon germanium;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131669
