Colossal magnetoresistance effect in perovskite La0.9Sb0.1MnO3 films prepared by pulsed laser deposition

Author

Hu, Chao ; Duan, Ping ; Wang, Jiyou ; Wenjing Duan ; Zou, Zhaogui ; Chang, Lei

Author_Institution

Coll. of Appl. Sci., Beijing Univ. of Technol., Beijing, China

fYear

2011

fDate

26-28 July 2011

Firstpage

2044

Lastpage

2046

Abstract

La_0.9Sb_0.1MnO₃ (LSMO) thin films were deposited on single-crystal LaAIO₃ (001) substrates by pulsed laser deposition technique. The films have a perovskite single-phase structure from X-ray diffraction pattern. The electrical transport and magnetic properties have been investigated for La_0.9Sb_0.1MnO₃ thin films with thickness 300 nm. The result indicate that the film perform the colossal magnetoresistance (CMR) effect with the maximum magnetoresistance (MR) ratio of 63% at temperature of 190 K and field of 2.3 T.

Keywords

X-ray diffraction; antimony compounds; colossal magnetoresistance; lanthanum compounds; magnetic thin films; pulsed laser deposition; La_0.9Sb_0.1MnO₃-LaAlO₃; X-ray diffraction; colossal magnetoresistance; electrical transport; magnetic flux density 2.3 T; magnetic properties; perovskite single-phase structure; perovskite thin films; pulsed laser deposition; size 300 nm; temperature 190 K; Colossal magnetoresistance; Films; Magnetic field measurement; Magnetic fields; Magnetic properties; Temperature dependence; Temperature measurement; La0.9Sb0.1MnO3; colossal magnetoresistance; film;

fLanguage

English

Publisher

ieee

Conference_Titel

Multimedia Technology (ICMT), 2011 International Conference on

Conference_Location

Hangzhou

Print_ISBN

978-1-61284-771-9

Type

conf

DOI

10.1109/ICMT.2011.6002570

Filename

6002570