High performance Si.45Ge.55 Implant Free Quantum Well FET featuring low temperature process, eSiGe stressor and transversal strain relaxation

Author

Yamaguchi, S. ; Witters, L. ; Mitard, J. ; Eneman, Geert ; Hellings, Geert ; Fukuda, M. ; Hikavyy, A. ; Loo, R. ; Veloso, A. ; Crabbe, Y. ; Rohr, E. ; Favia, P. ; Bender, H. ; Takeoka, S. ; Vellianitis, G. ; Wang, W. -E ; Ragnarsson, L.A. ; De Meyer, K. ;

Author_Institution

Imec, Leuven, Belgium

fYear

2011

fDate

5-7 Dec. 2011

Abstract

In this work, we report high performance Si_.45Ge_.55 Implant Free Quantum Well (IFQW) pFET with high drive current of 1.28mA/um at Ioff=160nA/um at channel length/width of 30nm/0.16um (Vdd=-1V). This is enabled by 1) low temperature process which maintains the integrity of the high mobility of Si_.45Ge_.55 channel, 2) embedded SiGe (eSiGe) stressor which is fully compatible with SiGe channel and 3) relaxation of unwanted transversal stress at narrow width channel which results in a significant mobility boost (1.9× mobility improvement from active width of 10um to 0.1um).

Keywords

elemental semiconductors; germanium; quantum wells; relaxation; semiconductor devices; silicon; SiGe; eSiGe stressor; high performance implant free quantum well FET; low temperature process; narrow width channel; transversal strain relaxation; unwanted transversal stress; Implants; Performance evaluation; Silicon; Silicon germanium; Strain; Stress; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131677

Filename

6131677