DocumentCode
3040395
Title
High performance n-MOS finFET by damage-free, conformal extension doping
Author
Zschätzsch, G. ; Sasaki, Y. ; Hayashi, S. ; Togo, M. ; Chiarella, T. ; Kambham, A.K. ; Mody, J. ; Douhard, B. ; Horiguchi, N. ; Mizuno, B. ; Ogura, M. ; Vandervorst, W.
Author_Institution
imec, Leuven, Belgium
fYear
2011
fDate
5-7 Dec. 2011
Abstract
A solution for conformal n-type finFET extension doping is demonstrated, yielding ION values of 1.23 mA/μm at IOFF=100 nA/um at 1V. This high device performance results from 40% reduced external resistance, which in term is stemming from 130% increased fin sidewall doping (confirmed by SIMS, SSRM and Atom Probe) relative to ion implant process. In this work we also report lowered gate leakage due to the damage-free extension doping.
Keywords
MOSFET; semiconductor doping; conformal extension doping; external resistance reduction; gate leakage; high performance n-MOS finFET; voltage 1 V; Annealing; Doping; FinFETs; Immune system; Logic gates; Performance evaluation; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131680
Filename
6131680
Link To Document