DocumentCode :
3040476
Title :
Si/Si1−xGex nanopillar superlattice solar cell: A novel nanostructured solar cell for overcoming the Shockley-Queisser limit
Author :
Watanabe, K. ; Tsuchiya, R. ; Oda, K. ; Yamamoto, J. ; Hattori, T. ; Matsumura, M. ; Kudo, M. ; Torii, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
fYear :
2011
fDate :
5-7 Dec. 2011
Abstract :
We propose a novel Si/Si1-xGex nanopillar superlattice solar cell enabling quantum confinement, light trapping, increased lifetime, and efficient carrier extraction for the first time. An average reflectance as low as 3.2% was achieved by adopting a hybrid nanopillar array structure. Auger recombination lifetime was significantly increased from 4×10-10 s to 2× 10-8 s by barrier height engineering of the Si/Si1-xGex superlattice. These two techniques are predicted to improve solar cell efficiency from 23% to 35%. Our results demonstrate the possibility of overcoming the theoretical (Shockley-Queisser) limit (30%) of conventional Si solar cell.
Keywords :
Auger effect; Ge-Si alloys; elemental semiconductors; nanostructured materials; semiconductor superlattices; silicon; solar cell arrays; Auger recombination lifetime; Shockley-Queisser limit; Si-Si1-xGex; carrier extraction; hybrid nanopillar array structure; light trapping; nanopillar superlattice solar cell; nanostructured solar cell; quantum confinement; Arrays; Charge carrier processes; Nanostructures; Photovoltaic cells; Reflectivity; Silicon; Superlattices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2011.6131685
Filename :
6131685
Link To Document :
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