Title :
Novel heterojunction solar cells with conversion efficiencies approaching 21% on p-type crystalline silicon substrates
Author :
Hekmatshoar, Bahman ; Shahrjerdi, Davood ; Sada, Devendra K.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We report novel high-efficiency heterojunction (HJ) solar cells with Engineered Low-bandgap Interlayer and Thin Epitaxial emitter (ELITE) structure, achieving a record conversion efficiency of 20.7% on p-type crystalline Si (c-Si) substrates. Cell fabrication is based on plasma-enhanced chemical vapor deposition (PECVD) of contact layers at temperatures below 200°C and room-temperature sputtering of low-cost Al-doped zinc-oxide (ZnO:Al) electrodes.
Keywords :
II-VI semiconductors; aluminium; elemental semiconductors; energy gap; plasma CVD; semiconductor growth; semiconductor heterojunctions; solar cells; sputter deposition; wide band gap semiconductors; ELITE structure; Si; ZnO:Al; cell fabrication; conversion efficiency; heterojunction solar cells; p-type crystalline silicon substrates; plasma enhanced chemical vapor deposition; Area measurement; Doping; Epitaxial growth; Heterojunctions; Photovoltaic cells; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131687
