Title :
Numerical simulations of parametric amplification of space charge waves in Zincblende structure n-GaN film
Author :
Garcia-B, Abel ; Grimalsky, V.
Author_Institution :
Dept. de Mecatronica, Univ. Politec. de Pachuca (UPP), Hidalgo
Abstract :
Three-wave non-linear interactions of space charge waves (SCW) in n-GaN films placed onto a semi-infinite substrate, possessing the negative differential mobility, are analyzed and simulated numerically. An effective frequency up-conversion with amplification in millimeter wave range is demonstrated. When compared with a case of the n-GaAs film, it is possible to observe an amplification of SCW in n-GaN films of submicron thicknesses at essentially higher frequencies f ges 100 GHz.
Keywords :
III-V semiconductors; amplification; gallium compounds; millimetre wave amplifiers; numerical analysis; parametric amplifiers; semiconductor thin films; space charge waves; wide band gap semiconductors; GaN; frequency up-conversion; negative differential mobility; numerical simulations; parametric amplification; semiinfinite substrate; space charge waves; submicron thicknesses; three-wave nonlinear interactions; zincblende structure n-GaN films; Analytical models; Conductive films; Electromagnetic analysis; Electromagnetic scattering; Frequency; Millimeter wave technology; Numerical simulation; Space charge; Space technology; Substrates; Negative Diferencial Conductivity and Microwave Devices; Space Charge Waves; n-GaN Films;
Conference_Titel :
Antenna Technology and Applied Electromagnetics and the Canadian Radio Science Meeting, 2009. ANTEM/URSI 2009. 13th International Symposium on
Conference_Location :
Banff, AB
Print_ISBN :
978-1-4244-2979-0
Electronic_ISBN :
978-1-4244-2980-6
DOI :
10.1109/ANTEMURSI.2009.4805068
