Numerical simulations of parametric amplification of space charge waves in Zincblende structure n-GaN film

Author

Garcia-B, Abel ; Grimalsky, V.

Author_Institution

Dept. de Mecatronica, Univ. Politec. de Pachuca (UPP), Hidalgo

fYear

2009

fDate

15-18 Feb. 2009

Firstpage

1

Lastpage

4

Abstract

Three-wave non-linear interactions of space charge waves (SCW) in n-GaN films placed onto a semi-infinite substrate, possessing the negative differential mobility, are analyzed and simulated numerically. An effective frequency up-conversion with amplification in millimeter wave range is demonstrated. When compared with a case of the n-GaAs film, it is possible to observe an amplification of SCW in n-GaN films of submicron thicknesses at essentially higher frequencies f ges 100 GHz.

Keywords

III-V semiconductors; amplification; gallium compounds; millimetre wave amplifiers; numerical analysis; parametric amplifiers; semiconductor thin films; space charge waves; wide band gap semiconductors; GaN; frequency up-conversion; negative differential mobility; numerical simulations; parametric amplification; semiinfinite substrate; space charge waves; submicron thicknesses; three-wave nonlinear interactions; zincblende structure n-GaN films; Analytical models; Conductive films; Electromagnetic analysis; Electromagnetic scattering; Frequency; Millimeter wave technology; Numerical simulation; Space charge; Space technology; Substrates; Negative Diferencial Conductivity and Microwave Devices; Space Charge Waves; n-GaN Films;

fLanguage

English

Publisher

ieee

Conference_Titel

Antenna Technology and Applied Electromagnetics and the Canadian Radio Science Meeting, 2009. ANTEM/URSI 2009. 13th International Symposium on

Conference_Location

Banff, AB

Print_ISBN

978-1-4244-2979-0

Electronic_ISBN

978-1-4244-2980-6

Type

conf

DOI

10.1109/ANTEMURSI.2009.4805068

Filename

4805068