Title :
Novel nanospring interconnects for high-density applications
Author :
Ma, Lunyu ; Zhu, Qi ; Sitaraman, Suresh K. ; Chua, Chris ; Fork, David K.
Author_Institution :
CASPaR Lab., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
A new cantilevered structure, called the nanospring, is being developed to enable a fine-pitch, high density I/O architecture for the next generation chip and probing technology. This technology meets the requirements of the National Technology Roadmap for Semiconductors (NTRS) for 2012 and beyond. Based on its unique structure, a new contact mode of sliding contact with no solder is being tested. To understand the reliability of the package with this novel compliant structure and the typical behavior of sliding contacts, test vehicles with different orientations of the nanospring (21 μm pitch) have been fabricated, assembled and subjected to thermal cycling tests. In-situ resistance and temperature measurements have been conducted
Keywords :
electric resistance; electrical contacts; fine-pitch technology; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; microassembling; nanotechnology; thermal analysis; thermal stresses; 21 micron; National Technology Roadmap for Semiconductors; assembly; cantilevered structure; chip technology; compliant structure; contact mode; fine-pitch high density I/O architecture; high-density applications; in-situ resistance measurements; in-situ temperature measurements; nanospring; nanospring interconnects; nanospring orientations; package reliability; probing technology; sliding contact; sliding contacts; test vehicles; thermal cycling tests; Application software; Compressive stress; Costs; Electronic packaging thermal management; Fabrication; Nanostructures; Tensile stress; Testing; Thermal stresses; Vehicles;
Conference_Titel :
Advanced Packaging Materials: Processes, Properties and Interfaces, 2001. Proceedings. International Symposium on
Conference_Location :
Braselton, GA
Print_ISBN :
0-930815-64-5
DOI :
10.1109/ISAOM.2001.916604
