DocumentCode :
3040777
Title :
A new approach to the robust wirebonding
Author :
Van Pham, Cuong ; Huth, Ken
fYear :
2001
fDate :
2001
Firstpage :
379
Lastpage :
385
Abstract :
Electronics manufacturers are pursuing miniaturization in order to cope with the prevailing electronic trends. In doing so, they are faced with shrinking the size of silicon chips, while adding more functions (the number of the inputs and outputs, I/Os). However, the IC component yield decreases with the increase in I/Os, since the wirebonding process yield providing the interconnection for the I/Os remains constant. The bottom line is lower profits. Based on the diffusion theories behind wirebonding and the effects of both thermal and kinetic energies on the behavior of materials, the authors propose a model for a “robust” bond and an approach to obtain that model in the wirebonding process
Keywords :
diffusion; integrated circuit interconnections; integrated circuit packaging; integrated circuit yield; lead bonding; semiconductor process modelling; IC component yield; Si; diffusion theories; electronics manufacture; interconnection; kinetic energy; materials behaviour; miniaturization; robust bond model; robust wirebonding; silicon chip I/Os; silicon chip functions; silicon chip inputs/outputs; silicon chip size reduction; thermal energy; wirebonding; wirebonding process; wirebonding process yield; Diffusion bonding; Geometry; Integrated circuit testing; Manufacturing; Materials testing; Robustness; Scanning probe microscopy; Silicon; Tail; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Packaging Materials: Processes, Properties and Interfaces, 2001. Proceedings. International Symposium on
Conference_Location :
Braselton, GA
Print_ISBN :
0-930815-64-5
Type :
conf
DOI :
10.1109/ISAOM.2001.916605
Filename :
916605
Link To Document :
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