Phase thickness deviations´ influence on properties of antireflection coatings for near infrared detectors

Investigation deals with problems of computer-aided design of wide-band antireflection (AR) coatings for semiconductor photosensitive devices (discrete photo receivers, CCD-cameras, modern security systems and others) for spectral region 0.9 μm - 1.7 μm. In practice during deposition of multilayer coatings some deviations of desired coatings´ thicknesses always occurs which worsens antireflection properties of the coatings. It is important to know how the phase thickness deviations influence on transmission spectrum of the system: substrate - AR coating. As a result of the analysis it is shown that six-layer structure possesses the lowest reflection and high stability when phase thickness deviations´ occurs.