• DocumentCode
    3040809
  • Title

    Integrated circuit fabrication technology and laboratory courses at the University of Arkansas

  • Author

    Naseem, H.A. ; Brown, W.D.

  • Author_Institution
    Dept. of Electr. Eng., Arkansas Univ., Fayetteville, AR, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    6
  • Lastpage
    9
  • Abstract
    Since 1979, the Department of Electrical Engineering, University of Arkansas, Fayetteville, AR has offered the courses, IC Fabrication Technology (ELEG 5213) and its laboratory sequel, IC Fabrication Lab (ELEG 5293), as technical elective courses for seniors and graduate students interested in a microelectronic processing emphasis. The IC Fab Tech course covers silicon crystal growth, epitaxy, oxidation, diffusion, ion implantation, CVD and PVD growth, and metallization processes and their underlying mechanisms. In the IC Fab Lab, students start with polished Si wafers and use a six level mask set to fabricate various test structures. These include planar four probe resistors, capacitors, p-n junctions, bipolar transistors, MOS devices, and other process control and alignment structures. This lab is conducted in the Teres Instruments Solid State Laboratory of the Department of Electrical Engineering and is equipped with an RO system for the de-ionized water and Class 100 laminar flow workbenches
  • Keywords
    educational courses; electronic engineering education; integrated circuit technology; laboratories; University of Arkansas; integrated circuit fabrication technology; laboratory course; microelectronic processing; Atherosclerosis; Epitaxial growth; Fabrication; Integrated circuit technology; Ion implantation; Laboratories; Metallization; Microelectronics; Oxidation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 1999. Proceedings of the Thirteenth Biennial
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-5240-8
  • Type

    conf

  • DOI
    10.1109/UGIM.1999.782811
  • Filename
    782811