• DocumentCode
    3040826
  • Title

    Intel LVS logic as a combinational logic paradigm in CNT technology

  • Author

    Liu, Bao ; Cao, Zhen ; Tao, Jun ; Zeng, Xuan ; Tang, Pushan ; Wong, Philip H -S

  • Author_Institution
    ECE Dept., Univ. of Texas, San Antonio, TX, USA
  • fYear
    2010
  • fDate
    17-18 June 2010
  • Firstpage
    77
  • Lastpage
    81
  • Abstract
    In this paper, we systematically evaluate combinational logic families for CNT technology implementation for a variety of logic families, signal transition times, and transistor parameters. We compare CMOS static logic, transmission gate logic, and Intel LVS logic in CNT and silicon technologies by SPICE simulation based on Predictive Technology Model and Stanford compact CNFET models. We observe that CMOS static logic in CNT technology achieves limited (e.g., 3.44×) performance improvement and (e.g., 3.83×) power consumption reduction, while transmission gate logic and Intel LVS logic achieves more significant performance improvement and orders-of-magnitude of power consumption reduction. Intel LVS logic achieves an average of 4.02× performance improvement and 1137.64× power consumption reduction compared with CMOS static logic in silicon for the same combinational logic functions and input signals, and enhanced reliability, making it an ideal combinational logic circuit paradigm in CNT technology.
  • Keywords
    CMOS logic circuits; SPICE; carbon nanotubes; field effect transistors; logic circuits; CMOS static logic; CNFET models; CNT technology; Intel LVS logic; SPICE simulation; combinational logic circuit paradigm; predictive technology model; transmission gate logic; CMOS logic circuits; CMOS technology; Combinational circuits; Energy consumption; Logic gates; Power system modeling; Predictive models; SPICE; Semiconductor device modeling; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscale Architectures (NANOARCH), 2010 IEEE/ACM International Symposium on
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    978-1-4244-8020-3
  • Type

    conf

  • DOI
    10.1109/NANOARCH.2010.5510922
  • Filename
    5510922