DocumentCode
3040908
Title
High permittivity gate insulators TiO2 and ZrO2
Author
He, B. ; Hoilien, N. ; Smith, R. ; Ma, T. ; Taylor, C. ; Omer, I. St ; Campbell, S.A. ; Gladfelter, W.L. ; Gribelyuk, M. ; Buchanan, D.
Author_Institution
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA
fYear
1999
fDate
1999
Firstpage
33
Lastpage
36
Abstract
Polycrystalline films of TiO2 and ZrO2 have been deposited from their respective tetranitrato precursors. Film microstructure has been examined. The leakage current depends on the process conditions, and particularly on a post deposition hydrogen anneal. An interfacial layer leads to a lower than expected capacitance. This layer is believed to be due to silicon oxidation in ZrO2 and silicate formation in TiO2
Keywords
annealing; capacitance; chemical vapour deposition; crystal microstructure; dielectric thin films; leakage currents; oxidation; permittivity; titanium compounds; zirconium compounds; CVD; TiO2; ZrO2; capacitance; film microstructure; high permittivity gate insulators; leakage current; polycrystalline films; post deposition hydrogen annealing; process conditions; silicate formation; silicon oxidation; tetranitrato precursors; Capacitance; Dielectric thin films; Dielectrics and electrical insulation; Leakage current; Manufacturing; Permittivity; Photonic band gap; Semiconductor films; Silicon; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 1999. Proceedings of the Thirteenth Biennial
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-5240-8
Type
conf
DOI
10.1109/UGIM.1999.782817
Filename
782817
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