Title :
Fabrication issues for multiple layers of SOI MOSFET devices
Author :
Yang, J. ; Denton, J. ; Neudeck, G.W. ; Bashir, R.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
Two basic concerns for the fabrication of multiple layers of SOI (MLSOI) devices, namely, thermal budget and SOI island thickness are discussed in this paper. To electrically characterize the dopant lateral diffusion in thin SOI films, a lateral N+ N N+ test structure was designed and simulated using TSUPREM-4 and MEDICI to investigate and measure the lateral diffusion in the SOI films. Simulation shows that the dopant profile in the thin SOI film is nice, straight and perpendicular to the silicon and SiO2 interface. The SOI film thickness of small sized islands can be determined by employing a simple Transmission Line Model (TLM) structure
Keywords :
MOSFET; diffusion; doping profiles; elemental semiconductors; island structure; semiconductor device measurement; semiconductor device models; semiconductor device testing; silicon; silicon compounds; silicon-on-insulator; MEDICI; SOI MOSFET devices; SOI island thickness; Si-SiO2; SiO2 interface; TSUPREM-4; dopant lateral diffusion; dopant profile; fabrication; film thickness; multiple layers; simulation; test structure; thermal budget; transmission line model; Fabrication; Immune system; MOSFET circuits; Medical simulation; Silicon on insulator technology; Temperature; Testing; Thermal resistance; Thickness control; Thickness measurement;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1999. Proceedings of the Thirteenth Biennial
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5240-8
DOI :
10.1109/UGIM.1999.782825
