• DocumentCode
    3041100
  • Title

    Selective zinc diffusion for GaAs0.6P0.4 LED arrays

  • Author

    Lawrence, David J. ; Heineman, Dawn L.

  • Author_Institution
    Integrated Sci. & Technol. Program, James Madison Univ., Harrisonburg, VA, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    87
  • Lastpage
    90
  • Abstract
    The fabrication of linear red LED arrays in an undergraduate laboratory is described. Isolated p+-n junctions are formed by selective zinc diffusion into n-type GaAs0.6P0.4 wafers. The performance of several thin film diffusion mask materials is compared. The investigated mask materials include phosphosilicate glass, silicon nitride, and silicon. Enhanced lateral diffusion of zinc under the mask along the SiO2 -GaAs0.6P0.4 interface is observed for all of these mask materials. Phosphosilicate glass films provide the best results, however, even in this case, the lateral diffusion is nearly nine times the diffusion depth. Electrical and optical characteristics of the resulting LED arrays are presented
  • Keywords
    III-V semiconductors; diffusion; gallium arsenide; light emitting diodes; optical arrays; zinc; GaAs0.6P0.4 LED array; GaAs0.6P0.4:Zn; SiO2-GaAs0.6P0.4 interface; fabrication; lateral diffusion; p+-n junction; phosphosilicate glass; selective zinc diffusion; silicon; silicon nitride; thin film diffusion mask; Fabrication; Gallium arsenide; Glass; Laboratories; Light emitting diodes; Optical arrays; Optical films; Silicon; Transistors; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 1999. Proceedings of the Thirteenth Biennial
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-5240-8
  • Type

    conf

  • DOI
    10.1109/UGIM.1999.782828
  • Filename
    782828
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3041100