DocumentCode
3041365
Title
CMOS and MEMS process investigation
Author
Whipple, Tony ; Cibuzar, Greg
Author_Institution
Microtechnol. Lab., Minnesota Univ., Minneapolis, MN, USA
fYear
1999
fDate
1999
Firstpage
161
Lastpage
164
Abstract
As MEMS technology matures as an industry, the integration of standard integrated circuit and MEMS devices will continue to increase. Presented is a brief overview of the work that others have done to solve these problems using hybrid, monolithic, or bonding techniques. Also presented are some of the problems that need to be overcome in having both processes on the same substrate, such as avoiding any contamination of the MOS circuit by normal MEMS processing steps. Previous work at the University of Minnesota Microtechnology Laboratory has demonstrated NMOS/CMOS or MEMS devices using the MTL facility. In this work we present simulation and test results, along with a proposed process that includes CMOS and MEMS devices on the substrate
Keywords
CMOS integrated circuits; integrated circuit modelling; micromechanical devices; CMOS; LPCVD; MEMS; NMOS; diffusion; simulation; Bonding; CMOS process; CMOS technology; Circuit simulation; Contamination; Integrated circuit technology; Laboratories; MOS devices; Microelectromechanical devices; Micromechanical devices;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 1999. Proceedings of the Thirteenth Biennial
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-5240-8
Type
conf
DOI
10.1109/UGIM.1999.782845
Filename
782845
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