• DocumentCode
    3041365
  • Title

    CMOS and MEMS process investigation

  • Author

    Whipple, Tony ; Cibuzar, Greg

  • Author_Institution
    Microtechnol. Lab., Minnesota Univ., Minneapolis, MN, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    161
  • Lastpage
    164
  • Abstract
    As MEMS technology matures as an industry, the integration of standard integrated circuit and MEMS devices will continue to increase. Presented is a brief overview of the work that others have done to solve these problems using hybrid, monolithic, or bonding techniques. Also presented are some of the problems that need to be overcome in having both processes on the same substrate, such as avoiding any contamination of the MOS circuit by normal MEMS processing steps. Previous work at the University of Minnesota Microtechnology Laboratory has demonstrated NMOS/CMOS or MEMS devices using the MTL facility. In this work we present simulation and test results, along with a proposed process that includes CMOS and MEMS devices on the substrate
  • Keywords
    CMOS integrated circuits; integrated circuit modelling; micromechanical devices; CMOS; LPCVD; MEMS; NMOS; diffusion; simulation; Bonding; CMOS process; CMOS technology; Circuit simulation; Contamination; Integrated circuit technology; Laboratories; MOS devices; Microelectromechanical devices; Micromechanical devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 1999. Proceedings of the Thirteenth Biennial
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-5240-8
  • Type

    conf

  • DOI
    10.1109/UGIM.1999.782845
  • Filename
    782845