DocumentCode
3041476
Title
A new modeling and simulation capability for statistical analysis of the radiation hardness of integrated circuits
Author
Hess, Glenn T. ; Sanders, Thomas J. ; Means, Dale P.
Author_Institution
AET Inc., Melbourne, FL, USA
fYear
1999
fDate
1999
Firstpage
196
Lastpage
199
Abstract
An engineering-based model has been developed that statistically simulates the effects of radiation on integrated circuits. Prototype software has been developed that facilitates these simulations and includes the statistical analysis of performance parameter degradation
Keywords
integrated circuit modelling; radiation hardening (electronics); statistical analysis; engineering-based model; integrated circuits; modeling; performance parameter degradation; prototype software; radiation hardness; simulation; statistical analysis; Analytical models; Circuit simulation; Doping; Equations; Integrated circuit modeling; Physics; Radiation effects; Semiconductor device modeling; Software prototyping; Statistical analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 1999. Proceedings of the Thirteenth Biennial
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-5240-8
Type
conf
DOI
10.1109/UGIM.1999.782852
Filename
782852
Link To Document