Title :
A new modeling and simulation capability for statistical analysis of the radiation hardness of integrated circuits
Author :
Hess, Glenn T. ; Sanders, Thomas J. ; Means, Dale P.
Author_Institution :
AET Inc., Melbourne, FL, USA
Abstract :
An engineering-based model has been developed that statistically simulates the effects of radiation on integrated circuits. Prototype software has been developed that facilitates these simulations and includes the statistical analysis of performance parameter degradation
Keywords :
integrated circuit modelling; radiation hardening (electronics); statistical analysis; engineering-based model; integrated circuits; modeling; performance parameter degradation; prototype software; radiation hardness; simulation; statistical analysis; Analytical models; Circuit simulation; Doping; Equations; Integrated circuit modeling; Physics; Radiation effects; Semiconductor device modeling; Software prototyping; Statistical analysis;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1999. Proceedings of the Thirteenth Biennial
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5240-8
DOI :
10.1109/UGIM.1999.782852
