Bilayer Metal-Oxide CBRAM Technology for Improved Window Margin and Reliability

Author

Barci, Marinela ; Molas, Gabriel ; Toffoli, Alain ; Bernard, Mathieu ; Roule, Anne ; Cagli, Carlo ; Cluzel, Jacques ; Vianello, Elisa ; De Salvo, Barbara ; Perniola, Luca

Author_Institution

CEA LETI Minatec Campus, Grenoble, France

fYear

2015

fDate

17-20 May 2015

Firstpage

1

Lastpage

4

Abstract

In this paper, a detailed reliability analysis of metal-oxide CBRAM devices is presented. We demonstrated that the addition of a thin metal-oxide layer in the bottom of the memory stack significantly increases the ROFF and the memory window (more than 1 decade), with improved endurance performance. At the same time, high thermal stability was also achieved (window margin constant during more than 24 hours at 250°C). The origin of the window margin degradation during endurance is discussed and interpreted by means of a Trap Assisted Tunneling Model, putting in evidence the role of defect generation and Cu residual atoms in the resistive layer.

Keywords

copper; integrated circuit reliability; resistive RAM; thermal stability; bilayer metal-oxide CBRAM technology; copper residual atoms; defect generation; improved endurance; improved memory window margin; reliability analysis; resistive layer; temperature 250 C; thermal stability; thin metal-oxide layer; trap assisted tunneling model; window margin degradation; Aluminum oxide; Hafnium compounds; MONOS devices; Resistance; Stability criteria; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2015 IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4673-6931-2

Type

conf

DOI

10.1109/IMW.2015.7150278

Filename

7150278