Comparison of Photocurrent Spectra of InGaAsN QD and InGaAs QW Laser Devices

Author

Gao, Q. ; Buda, M. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT

fYear

2004

fDate

8-8 Dec. 2004

Firstpage

9

Lastpage

12

Abstract

An InGaAsN quantum dot (QD) laser structure and a reference InGaAs single quantum well (QW) laser structure were grown on GaAs substrates by metalorganic chemical vapor deposition. A comparison study of photocurrent spectra of these two structures was performed. It was found that InGaAsN QD devices exhibit a lower-energy transition and shows a smaller quantum-confined Stark effect than InGaAs QW devices. Also the wetting layer of InGaAsN QD devices shows a broader absorption peak than the InGaAs QW layer

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser transitions; photoemission; quantum confined Stark effect; quantum dot lasers; quantum well lasers; wide band gap semiconductors; GaAs substrates; InGaAs; InGaAs QW laser; InGaAsN; InGaAsN quantum dot laser; lower-energy transition; metalorganic chemical vapor deposition; photocurrent spectra; quantum-confined Stark effect; wetting layer; Absorption; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Indium gallium arsenide; Laser transitions; Photoconductivity; Quantum dot lasers; Quantum well lasers; Stark effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577479

Filename

1577479