• DocumentCode
    3041778
  • Title

    Choice of Silicon Etch Processes for Opto- and Microelectronic Device Fabrication Using Inductively Coupled Plasmas

  • Author

    Welch, C.C. ; Goodyear, A.L. ; Ditmer, G. ; Tan, G.

  • Author_Institution
    Oxford Instruments Plasma Technol., Bristol
  • fYear
    2004
  • fDate
    8-8 Dec. 2004
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    Silicon is a suitable material for an ever-expanding range of micro- and nano-scale opto- and microelectronic devices. In this work three different inductively coupled plasma (ICP) etching process strategies designed to meet the various different challenges that arise in micro- and nano-scale etching of silicon are described
  • Keywords
    elemental semiconductors; etching; nanotechnology; silicon; Si; inductively coupled plasmas; microelectronic devices; nanoscale optoelectronic devices; silicon etch; Electrodes; Etching; Fabrication; Instruments; Microelectronics; Nanoscale devices; Plasma applications; Plasma devices; Plasma materials processing; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
  • Conference_Location
    Brisbane, Qld.
  • Print_ISBN
    0-7803-8820-8
  • Type

    conf

  • DOI
    10.1109/COMMAD.2004.1577480
  • Filename
    1577480
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3041778