DocumentCode :
3041778
Title :
Choice of Silicon Etch Processes for Opto- and Microelectronic Device Fabrication Using Inductively Coupled Plasmas
Author :
Welch, C.C. ; Goodyear, A.L. ; Ditmer, G. ; Tan, G.
Author_Institution :
Oxford Instruments Plasma Technol., Bristol
fYear :
2004
fDate :
8-8 Dec. 2004
Firstpage :
13
Lastpage :
16
Abstract :
Silicon is a suitable material for an ever-expanding range of micro- and nano-scale opto- and microelectronic devices. In this work three different inductively coupled plasma (ICP) etching process strategies designed to meet the various different challenges that arise in micro- and nano-scale etching of silicon are described
Keywords :
elemental semiconductors; etching; nanotechnology; silicon; Si; inductively coupled plasmas; microelectronic devices; nanoscale optoelectronic devices; silicon etch; Electrodes; Etching; Fabrication; Instruments; Microelectronics; Nanoscale devices; Plasma applications; Plasma devices; Plasma materials processing; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
Type :
conf
DOI :
10.1109/COMMAD.2004.1577480
Filename :
1577480
Link To Document :
بازگشت