Probing the Indium Nitride Lattice Locally with the Radioisotope Probe /sup 111/ In/Cd

Author

Timmers, H. ; Dogra, Rakesh ; Shrestha, Sital Kaji ; Edge, A.V.J. ; Byrne, A.P.

Author_Institution

Sch. of Phys., Environ. & Mathematical Sci., Univ. of New South Wales, Canberra, ACT

fYear

2004

fDate

8-8 Dec. 2004

Firstpage

17

Lastpage

20

Abstract

The lattice structure of both InN grains with submicron dimensions and a MBE-grown InN film have been studied with the radioisotope probe ¹¹¹In/Cd and perturbed angular correlation spectroscopy. The quadrupole interaction frequency of the probe in this material has been measured to be of the order of 28 MHz, consistent with results for AlN and GaN. Strong damping of the signal indicates that InN has a highly defective lattice with diverse defect structures, which are not cured by annealing in the accessible temperature range

Keywords

annealing; indium compounds; molecular beam epitaxial growth; perturbed angular correlation; semiconductor growth; semiconductor thin films; wide band gap semiconductors; In-Cd; InN; MBE; annealing; indium nitride lattice; perturbed angular correlation spectroscopy; quadrupole interaction frequency; radioisotope probe; Annealing; Damping; Frequency measurement; Gallium nitride; Indium; Lattices; Molecular beam epitaxial growth; Probes; Radioactive materials; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577481

Filename

1577481