AlGaN/AlN/GaN High Electron Mobility Transistors with Improved Carrier Transport

Author

Parish, Gia ; Umana-Membreno, Gilberto A. ; Jolley, Stephen M. ; Buttari, Dario ; Keller, Stacia ; Nener, Brett D. ; Mishra, Umesh K.

Author_Institution

Sch. of Electr., Electron. & Comput. Eng., Western Australia Univ., Crawley, WA

fYear

2004

fDate

8-8 Dec. 2004

Firstpage

29

Lastpage

32

Abstract

Geo-magneto-resistance measurements have been made on AlGaN/GaN HEMT structures both with and without an AlN interlayer. The results show significantly higher carrier mobility at low temperatures for devices with the interlayer. Furthermore, the drop in mobility with increasing 2DEG density, commonly exhibited by AlGaN/GaN HEMTs, is dramatically reduced by introduction of the interlayer. These results provide insight into the role of alloy and interface roughness scattering on 2DEG properties

Keywords

aluminium compounds; carrier mobility; gallium compounds; high electron mobility transistors; interface roughness; magnetoresistance; semiconductor device measurement; two-dimensional electron gas; wide band gap semiconductors; 2DEG density; AlGaN-AlN-GaN; AlGaN/AlN/GaN high electron mobility transistors; Geo-magneto-resistance; carrier mobility; carrier transport; interface roughness; Aluminum gallium nitride; Breakdown voltage; Charge carrier density; Electron mobility; Frequency; Gallium nitride; HEMTs; MODFETs; Microwave transistors; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577484

Filename

1577484