Title :
Use of a Small Lattice Mis-Matched Metamorphic Substrate to Extend the Wavelength Range of a Broadband, Polarization Insensitive Semiconductor Optical Amplifier
Author :
Czaban, Josef A. ; Thompson, David A. ; Robinson, Brad J. ; Hul, Oksana ; Simmons, John G.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont.
Abstract :
An InAs0.155P0.845 metamorphic substrate is used to increase the long-wavelength range of tensile strained quantum-wells used in polarization-insensitive semiconductor optical amplifiers. The peak emission of the amplified spontaneous emission occurs on the light-hole sub-band at wavelength longer than 1640 nm. In addition, the metamorphic substrate reduces the degree of lateral composition modulation seen by tensile strained semiconductor materials grown by molecular beam epitaxy
Keywords :
III-V semiconductors; buffer layers; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor optical amplifiers; semiconductor quantum wells; substrates; superradiance; InAs0.155P0.845; InAs0.155P0.845 metamorphic substrate; amplified spontaneous emission; molecular beam epitaxy; semiconductor optical amplifier; tensile strained quantum-wells; Composite materials; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Optical polarization; Photonic band gap; Semiconductor optical amplifiers; Substrates; Tensile strain;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577486
