Title :
Wafer quality specification for future sub-half-micron ULSI devices
Author :
Ohmi, T. ; Takano, J. ; Tsuga, T. ; Kogure, M. ; Aoyama, S. ; Matsumoto, K. ; Makihara, K.
Author_Institution :
Dept. of Electr. Eng., Tohoku Univ., Sendai, Japan
Abstract :
It is pointed out that the surface microhardness dominating the electrical properties of very thin oxide films is strictly influenced by the wafer quality. The increase of the surface microhardness in some processes is shown to depend strongly on the silicon vacancy cluster concentration in the wafer. An epitaxial wafer having low silicon vacancy concentration is superior for sub-half-micron ULSI devices.<>
Keywords :
VLSI; insulating thin films; integrated circuit technology; surface topography; vacancies (crystal); electrical properties; epitaxial wafer; oxide films; sub-half-micron ULSI devices; surface microhardness; vacancy cluster concentration; wafer quality; Atomic force microscopy; Atomic layer deposition; Cleaning; Electric breakdown; Etching; Large Hadron Collider; Oxidation; Silicon; Surface treatment; Ultra large scale integration;
Conference_Titel :
VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-0698-8
DOI :
10.1109/VLSIT.1992.200626
