DocumentCode :
3041922
Title :
Monolithic integration of laser and waveguide using a twin-guide structure with absorption layer
Author :
Studenkov, P. ; Gokhale, M. ; Xu, L. ; Dries, J.C. ; Chao, C.P. ; Garbuzov, D. ; Forrest, S.R.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
fYear :
1997
fDate :
11-15 May 1997
Firstpage :
669
Lastpage :
672
Abstract :
We demonstrate for the first time the use of absorption layer to achieve mode control in an InP/InGaAsP integrated twin-guide (TG) laser structure. The In0.53Ga0.47As layer eliminates the even mode and makes characteristics of the integrated device insensitive to laser cavity length and structure variations, without degrading performance. A record high coupling efficiency of 45% from the TG laser to the integrated passive waveguide is obtained
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical waveguides; semiconductor lasers; 45 percent; In0.53Ga0.47As; InP-InGaAsP; absorption layer; coupling efficiency; mode control; monolithic integration; passive waveguide; twin-guide laser; Absorption; Etching; Indium phosphide; Laser feedback; Laser modes; Monolithic integrated circuits; Optical coupling; Optical waveguides; Photonics; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
ISSN :
1092-8669
Print_ISBN :
0-7803-3898-7
Type :
conf
DOI :
10.1109/ICIPRM.1997.600266
Filename :
600266
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3041922
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