Optimum microwave oscillator design using small-signal S-parameters

Author

Moselhy, A.M. ; Fouad, Mohamed R.

Author_Institution

Air Defence Res. Center, Cairo, Egypt

fYear

1996

fDate

19-21 Mar 1996

Firstpage

517

Lastpage

525

Abstract

An analytical approach to design of microwave BJTs and FETs oscillator is presented. The technique presented here is based on the small signal S-parameters which either may be measured or obtained from data sheet. By means of this technique two kinds of oscillators, 6-GHz MESFET oscillator and 2-GHz BJT oscillator, have been designed. The designed circuits are simulated by using general purpose analysis program. A practical circuit has been built by using microwave integrated circuit technology. The results of simulation program and the experimental measurements showed that the design method introduced is optimum approach for microwave transistor oscillator design

Keywords

MESFET circuits; S-parameters; bipolar transistor circuits; circuit optimisation; microwave oscillators; 2 GHz; 6 GHz; BJT oscillator; MESFET oscillator; integrated circuit technology; microwave transistor oscillator; optimum design; small-signal S-parameters; Analytical models; Circuit simulation; Design methodology; FETs; Integrated circuit measurements; Integrated circuit technology; MESFETs; Microwave measurements; Microwave oscillators; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Science Conference, 1996. NRSC '96., Thirteenth National

Conference_Location

Cairo

Print_ISBN

0-7803-3656-9

Type

conf

DOI

10.1109/NRSC.1996.551141

Filename

551141