Title :
Effect of shunt resistance and reverse saturation current on the performance of solar cells
Author :
Kamiel, Z. ; Tayel, M. ; Elbanna, M. ; Nasser, A.
Author_Institution :
Fac. of Eng., Alexandria Univ., Egypt
Abstract :
A study of the solar cell model concerning the effect of shunt resistance (Rsh) and the reverse saturation current (IO ) on the performance of solar cells is presented. It is found that an upper bound for the fill factor determines the maximum attainable efficiency. Also, there is a shunt value after which the model behaves independently of the value of the shunt resistance. The effect of the product of Rsh and IO on the maximum efficiency was further studied. This resulted in detecting a region of improved performance for both Rsh and IO
Keywords :
electric resistance; semiconductor device models; solar cells; fill factor; maximum efficiency; photovoltaic performance; reverse saturation current; shunt resistance; solar cell modelling; Impedance; Integrated circuit modeling; P-n junctions; Photovoltaic cells; Photovoltaic systems; Solar power generation; Voltage;
Conference_Titel :
Radio Science Conference, 1996. NRSC '96., Thirteenth National
Conference_Location :
Cairo
Print_ISBN :
0-7803-3656-9
DOI :
10.1109/NRSC.1996.551143
