• DocumentCode
    3041977
  • Title

    Effect of shunt resistance and reverse saturation current on the performance of solar cells

  • Author

    Kamiel, Z. ; Tayel, M. ; Elbanna, M. ; Nasser, A.

  • Author_Institution
    Fac. of Eng., Alexandria Univ., Egypt
  • fYear
    1996
  • fDate
    19-21 Mar 1996
  • Firstpage
    537
  • Lastpage
    545
  • Abstract
    A study of the solar cell model concerning the effect of shunt resistance (Rsh) and the reverse saturation current (IO ) on the performance of solar cells is presented. It is found that an upper bound for the fill factor determines the maximum attainable efficiency. Also, there is a shunt value after which the model behaves independently of the value of the shunt resistance. The effect of the product of Rsh and IO on the maximum efficiency was further studied. This resulted in detecting a region of improved performance for both Rsh and IO
  • Keywords
    electric resistance; semiconductor device models; solar cells; fill factor; maximum efficiency; photovoltaic performance; reverse saturation current; shunt resistance; solar cell modelling; Impedance; Integrated circuit modeling; P-n junctions; Photovoltaic cells; Photovoltaic systems; Solar power generation; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Science Conference, 1996. NRSC '96., Thirteenth National
  • Conference_Location
    Cairo
  • Print_ISBN
    0-7803-3656-9
  • Type

    conf

  • DOI
    10.1109/NRSC.1996.551143
  • Filename
    551143
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3041977