Title :
Proton Irradiation Induced Intermixing in In_xGa_1-xAs/InP Quantum Wells
Author :
Gareso, P.L. ; Tan, H.H. ; Wong-Leung, J. ; Jagadish, C. ; Dao, L.V.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
Abstract :
We have investigated the quantum well interdiffusion of Inx Ga1-xAs/InP QWs with different In composition using proton irradiation. 50 KeV proton implantation with various doses from 5×1014 H/cm2 with subsequent annealing at 750° for 60 sec were used to induce the atomic intermixing process. Photoluminescence was performed to measure the bandgap energy shift between the unimplanted and implanted region of the structures. Initially, the energy shift increased with increasing dose, but then saturated at the highest doses. The energy shift was also found to decrease with increased implantation temperature. Time resolved photoluminescence was performed to investigate the carrier dynamic of the quantum wells after intermixing
Keywords :
III-V semiconductors; annealing; chemical interdiffusion; gallium arsenide; indium compounds; ion implantation; photoluminescence; proton effects; semiconductor quantum wells; 750 degC; InxGa1-xAs-InP; InxGa1-xAs/InP quantum wells; annealing; atomic intermixing; bandgap energy shift; photoluminescence; proton implantation; quantum well interdiffusion; quantum well intermixing; Annealing; Atomic measurements; Energy measurement; Energy resolution; Indium phosphide; Performance evaluation; Photoluminescence; Photonic band gap; Protons; Temperature; InGaAs quantum wells; Proton irradiation; interdiffusion; intermixing;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577500
