DocumentCode
3042125
Title
Strain Evaluation of Plasma-Deposited Silicon Nitride
Author
Soh, M.T.K. ; Musca, C.A. ; Savvides, N. ; Dell, J.M. ; Faraone, L.
Author_Institution
Sch. of Electr., Electron. & Comput. Eng., Western Australia Univ., Crawley, WA
fYear
2004
fDate
8-10 Dec. 2004
Firstpage
97
Lastpage
100
Abstract
Plasma-deposited silicon nitride thin films were deposited at temperatures between 150 and 300 degC. Diagnostic microstructures were fabricated from the thin films using bulk micromachining, and the strain was calculated from optical measurement of post-buckling deflection. The results indicate that the residual strain of the thin films is dominated by the difference in coefficient of thermal expansion between the thin film and substrate, which monotonically increases with decreasing deposition temperature
Keywords
optical films; plasma deposition; silicon compounds; thermal expansion; 150 to 300 degC; SiN; micromachining; plasma-deposited silicon nitride; post-buckling deflection; residual strain; thermal expansion; Capacitive sensors; Microstructure; Optical films; Plasma diagnostics; Plasma measurements; Plasma temperature; Semiconductor thin films; Silicon; Sputtering; Strain measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location
Brisbane, Qld.
Print_ISBN
0-7803-8820-8
Type
conf
DOI
10.1109/COMMAD.2004.1577501
Filename
1577501
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