Characterisation of ZnO Thin Films Grown Directly on Sapphire by PAMBE

Author

Lee, W.C.T. ; Miller, P. ; Walsby, E.D. ; Markwitz, A. ; Kennedy, J. ; Reeves, R.J. ; Durbin, S.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Canterbury Univ., Christchurch

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

105

Lastpage

108

Abstract

Single crystal ZnO was grown on (0001) sapphire substrates using plasma-assisted molecular beam epitaxy (PAMBE). Poor wetting of the sapphire surface is observed via SEM, and the surface morphology varies dramatically as the Zn flux is changed. Photoluminescence shows sharp excitonic peaks at 3.409 eV and 3.395 eV, suggesting the thin films are highly affected by strain. Ion beam analysis shows evidence of nominally stoichiometric growth in most cases. The feasibility of epitaxial lateral overgrowth (ELO) applied to ZnO is described as a possible mean of improving quality

Keywords

II-VI semiconductors; molecular beam epitaxial growth; photoluminescence; sapphire; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; stoichiometry; substrates; surface morphology; wide band gap semiconductors; zinc compounds; 3.395 eV; 3.409 eV; Al₂O₃; PAMBE; ZnO; ZnO thin films; epitaxial lateral overgrowth; excitonic peaks; ion beam analysis; photoluminescence; plasma-assisted molecular beam epitaxy; sapphire substrates; stoichiometric growth; surface morphology; wetting; Crystalline materials; Molecular beam epitaxial growth; Nanotechnology; Photoluminescence; Plasma temperature; Pollution measurement; Substrates; Surface morphology; Transistors; Zinc oxide; ZnO; epitaxial lateralovergrowth; molecular beam epitaxy; photoluminescence; wide bandgap semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577503

Filename

1577503