Title :
Epitaxial Silicon Microshell Vacuum-Encapsulated CMOS-Compatible 200 MHz Bulk-Mode Resonator
Author :
Chen, Kuan-Lin ; Chandrahalim, Hengky ; Graham, Andrew B. ; Bhave, Sunil A. ; Howe, Roger T. ; Kenny, Thomas W.
Author_Institution :
Stanford Univ., Stanford, CA
Abstract :
This paper shows the first successful combination of dielectrically-transduced 200 MHz resonators with the epi-silicon encapsulation process, and demonstrates a set of important capabilities needed for the construction of CMOS-compatible RF MEMS components. The result shows the resonant frequency of 207 MHz and a quality factor of 6,400. The high fQ (1.2times1012 Hz) makes this encapsulated resonator an excellent candidate for applications in local oscillators and RF spectrum analyzers.
Keywords :
VHF devices; microcavities; micromechanical resonators; radiofrequency oscillators; spectral analysers; CMOS compatible resonator; RF MEMS components; RF spectrum analyzers; bulk-mode resonator; dielectrically transduced resonator; episilicon encapsulation process; epitaxial silicon microshell vacuum encapsulated resonator; frequency 200 MHz; frequency 207 MHz; local oscillators; Capacitive sensors; Dielectric thin films; Electrodes; Encapsulation; Micromechanical devices; Packaging; Q factor; Radio frequency; Resonant frequency; Silicon;
Conference_Titel :
Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-2977-6
Electronic_ISBN :
1084-6999
DOI :
10.1109/MEMSYS.2009.4805309
