Title :
A new salicide process (PASET) for sub-half micron CMOS
Author :
Sakai, I. ; Abiko, H. ; Kawaguchi, H. ; Hirayama, T. ; Johansson, L.E.G. ; Okabe, K.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
A Ti salicide process featuring pre-amorphization before Ti film deposition and sequential two-step sintering (PASET) for sub-half-micron CMOS is discussed. Pre-amorphization by As implantation can realize low and uniform sheet resistance TiSi/sub 2/ on highly As-doped n+ poly and diffusion layers with sub-half micron line width. Implanted As for pre-amorphization and sequential two step sintering prevents the TiSi/sub 2/ overgrowth on p+ poly and diffusion layers. The PASET process technology widens the process window. The resulting n- and p-MOSFETs show excellent characteristics.<>
Keywords :
CMOS integrated circuits; amorphisation; insulated gate field effect transistors; integrated circuit technology; ion implantation; metallisation; sintering; As implantation; PASET; Si:As; n-MOSFET; p-MOSFETs; pre-amorphization; salicide process; self aligned TiSi/sub 2/; sequential two-step sintering; sub-half-micron CMOS; uniform sheet resistance; CMOS process; CMOS technology; Ion beams; Ion implantation; MOSFET circuits; National electric code; Proposals; Silicides; Temperature; Very large scale integration;
Conference_Titel :
VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-0698-8
DOI :
10.1109/VLSIT.1992.200647
